Low Temperature Physics: 42, 111 (2016); https://doi.org/10.1063/1.4941963
Fizika Nizkikh Temperatur: Volume 42, Number 2 (February 2016), p. 149-158    ( to contents , go back )

Interference effects in the Si–Ge heterostructures with quantum wells of different width

I.B. Berkutov1,2,3, V.V. Andrievskii1,2, Yu.F. Komnik1, Yu.A. Kolesnichenko1, A.I. Berkutova4,5, D.R. Leadley6, and O.A. Mironov2,6

1B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
E-mail: berkutov@ilt.kharkov.ua

2International Laboratory of High Magnetic Fields and Low Temperatures, 50-985 Wroclaw, Poland

3The University of Manchester, Oxford Road, Manchester M13 9PL, UK

4Pavol Jozef Šafárik University in Košice, Šrobárova 2, Košice 041 80, Slovak Republic

5V.N. Karazin Kharkiv National University, 4 Svobody Sq., Kharkiv 61022, Ukraine

6Department of Physics, University of Warwick, Coventry CV4 7AL, UK

Received November 4, 2015


The effects of weak localization and interaction of charge carriers in a two p-type Si0.7Ge0.3/Si0.2Ge0.8/Si0.7Ge0.3 heterostructures with one and two subbands, respectively, occupy have been investigated. The weak localization effect of holes in conditions when the inelastic scattering time and spin orbit scattering time have close values was found in very weak magnetic fields. It is shown that splitting of the spin states occurs due to the influence of the perturbing potential (Rashba mechanism). The interaction effect which occurs due to Coulomb interaction with a scatter has been detected and analyzed in higher magnetic fields in case of one subband occupy. The dominant mechanism of scattering by Friedel oscillations of the charge carrier density, induced by the electric field of the impurity, is a dominant in the case of two subband occupy. In all regions the behavior of the interaction quantum correction is in good agreement with the modern theoretical predictions.

PACS: 72.20.My Galvanomagnetic and other magnetotransport effects;
PACS: 73.20.Fz Weak or Anderson localization.

Key words: magnetoresistance, weak localization, interaction effects.

Published online: December 23, 2015

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