Fizika Nizkikh Temperatur: Volume 44, Number 8 (August 2018), p. 1018-1024 ( to contents , go back )
The overheating effects in germanium quantum well with two subbands occupied
I.B. Berkutov1,2,3, V.V. Andrievskii1,2, Yu.A. Kolesnichenko1, Yu.F. Komnik1, and O.A. Mironov2,4
1B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Nauky Ave., Kharkiv 61103, Ukraine
2Institute of Low Temperature and Structure Research, Polish Academy of Sciences ul. Okólna 2, 50-422, Wrocław, Poland
3Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
4Department of Physics, University of Warwick, Coventry CV4 7AL, UK
Received March 29, 2018
The charge carrier overheating effect was studied in the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τh-ph at weak magnetic fields demonstrated transition of the 2D system from regime of “partial inelasticity” characterized by dependence τ-1h-ph ∝ T 2 to regime of small-angle scattering, described by dependence τ-1h-ph ∝ T 5 with temperature increase. But in higher magnetic fields the dependence τ-1h-ph ∝ T 3 manifests itself on dependences τh-ph(Th-ph). The possible explanations of such dependences are discussed.
PACS: 72.15.Lh Relaxation times and mean free path;
Key words: quantum well, overheating effects, acoustical coupling, the heat balance equation.
Published online: June 27, 2018