Recombination and long-term relaxation of photoconductivity in р+–р–р– structures of CdxHg1–xTe (0.24 ≤ x ≤ 0.29)
N.J. Ismayilov and A.A. Rajabli
Institute of Physics of the National Academy of Sciences of Azerbaijan, Baku Az 1143, Azerbaijan
E-mail: ismailovnamik@yahoo.com;
rajabli.alovsat@mail.ru
M.A. Musayev and I.I. Abbasov
Azerbaijan State Oil and Industry University, Baku Az 1010, Azerbaijan
E-mail: m_musaver@yahoo.com;
ibrahimabbasov179@gmail.com
Received February 5, 2018, revised April 5, 2018
Abstract
The paper presents the results of a study of the photoconductivity of р+–р–р– structures of CdxHg1–xTe (0.24 ≤ x ≤ 0.29) single crystals obtained by thermal diffusion of copper at T = 130°C. The long-term relaxation (LR) of photoconductivity with a duration of up to 10 ms in the presence of a thermal background of intensity Φ = 1016–1017 cm–2⋅s–1 is observed for the first time in narrow-gap materials in the T = 77–150 K range. Recombination, diffusion-drift processes in the sample are analyzed, which cause LR and spectral features of photoconductivity. The obtained structures are promising for the development of various highly sensitive IR detectors with an elevated operating temperature.
PACS: 71.22.+i Electronic structure of liquid metals and semiconductors and their alloys;
PACS: 72.40.+w Photoconduction and photovoltaic effects;
PACS: 73.50.–h Electronic transport phenomena in thin films;
PACS: 78.30.–j Infrared and Raman spectra;
PACS: 84.60.Jt Photoelectric conversion.
Key words: HgCdTe, thermal diffusion of copper, р+–р–р– structures, long-term relaxation, photoconductivity,recombination.
Published online: June 27, 2018
