Fizika Nizkikh Temperatur: Volume 44, Number 11 (November 2018), p. 1521-1527    ( to contents , go back )

Berry phase in strained InSb whiskers

A. Druzhinin1,2, I. Ostrovskii1,2, Yu. Khoverko1,2, N. Liakh-Kaguy1, and K. Rogacki2

1Lviv Polytechnic National University, 12 S. Bandera Str., Lviv 79013, Ukraine

2Institute of Low Temperature and Structure Research PAS, 95 Gajowicka, Wroclaw, Poland

Received May 23, 2018, published online September 26, 2018


Strain influence on the longitudinal magnetoresistance for the n-type conductivity InSb whiskers doped by Sn to concentrations 6·1016–6·1017 сm–3 were studied at temperatures from 4.2 to 50 K and magnetic field upto 10 T. The Shubnikov–de Haas oscillations at low temperatures were revealed in the strained and unstrained samples with all range doping concentration. Some peaks of the longitudinal magnetoresistance split as a doublet in the InSb whiskers with doping concentration in the vicinity to metal-insulator transition. Taking into account peak splitting giant g-factor from 30 to 60 was defined for strained and unstrained samples. The magnetoresistance oscillation period of the InSb whiskers doesn’t differ under strain for all doping concentration, but Fermi energy increases and electron effective mass mс decreases and consists 0.02 m0. Berry phase presence was also revealed in strained n-InSb whiskers that shows their transition under a strain to topological insulator phase.

Key words: InSb whiskers, longitudinal magnetoresistance oscillations, doping concentration, g-factor, Berry phase.

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