Concentration maxima of the mobility of 2D electrons scattered by correlated impurity ions in thin doped layers
M.N. Mikheev Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences Yekaterinburg 620108, Russia Ural Federal University, Yekaterinburg 620002, Russia
Received June 15, 2018, revised Jule 13, 2018, published online November 26, 2018
Using the example of the AlxGa1–xAs/GaAs heterostructure, the concentration dependences of the mobility of 2D electrons upon scattering by an equilibrium correlated distribution of impurity ions at fixed temperatures are theoretically studied. It is shown that, in the case of significant correlations in the arrangement of impurity ions, the presence of the effect of “electron conduction inversion” leads to local maxima of the electron mobility.
Key words: defects, dislocations, strength physics.