Volt-farad phenomena in MOS (metal–oxide–semiconductor) structures (Review Article)
A. Levchenko1, L. Meghov-Deglin1, I. Chikina2, and V. Shikin1
1Институт физики твердого тела РАН, 142432 Черноголовка, Россия
2LIONS, NIMBE, CEA, CNRS, Universite’ Paris-Saclay, CEA-Saclay, 91191 Gif-sur-Yvette Cedex, France
Received February 20, 2019, published online June 26, 2019
The present paper discusses methodical possibilities for the study of volt-farad phenomena in widely used planar metal–oxide–semiconductor structures (MOS sandwiches) and main effects for which the proposed review turns to be effective. Among those there are the formation kinetics of two-dimensional charged layers on the surface of cryogenic liquids and in semi-conductor structures (inversion, accumulative layers in MOS sandwiches including water as an intrinsic semiconductor), the details of behavior of the dielectric constant of liquid dielectrics which contain a small fraction of intrinsic ions, the properties of an electrolytic capacitor, the nonlinear effects which accompany the decay kinetics of the surface of a liquid dielectric (cryogenic or normal one) losing its stability in an external electric field normal to the liquid–vapor interface, etc. A deep analogy between statistical properties of water as an intrinsic semiconductor and electron-hole semiconductors is stressed. The advantages of volt-farad diagnostics of water as an intrinsic semiconductor are mentioned.
Key words: intrinsic electrolyte, cryogenic electrolyte, accumulation layer, inversion layer, electrolytic capacitor.