Low Temperature Physics: 45, 1277 (2019); https://doi.org/10.1063/10.0000209
Fizika Nizkikh Temperatur: Volume 45, Number 12 (December 2019), p. 1509-1513    ( to contents , go back )

Concentration dependence of the electrical conductivity and the Hall effect of CexSn1–xSe monocrystals

I.I. Abbasov

Азербайджанский государственный университет нефти и промышленности, г. Баку, Азербайджан
E-mail: ibrahimabbasov179@gmail.com

Sh.S. Ismailov

Institute of Radiation of Problems NAS of Azerbaijan, B.Vahabzade str. 9, Baku, AZ1143, Azerbaijan

J.I. Huseynov

N. Tusi Azerbaijan State Pedagogical University Gadzhibekova st., 34, Baku, Azerbaijan

V.A. Abdurahmanova

G.M Abdullayev Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan

Received May 13, 2019, revised Jule 9, 2019, published online October 25, 2019


The concentration dependences of the Hall coefficient, electrical conductivity and charge carrier mobility in CexSn1–xSe (х ≤ 0,02) are investigated in the temperature range 77–400 K. In the samples studied, impurities are compensated by their own defects and with increasing cerium concentration (Ce) (x = 0, 01; 0.015) the concentration of donor impurities increases and a change in the type of conductivity is observed.

Key words: Hall coefficient, conductivity, mobility, activation energy, scattering mechanism.

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