Fizika Nizkikh Temperatur: Volume 46, Number 11 (November 2020), p. 1310-1317    ( to contents , go back )

Effect of doping level and compensation on thermal conductivity in CexSn1–xSe solid solutions

Sh. S. Ismailov

Institute of Radiation Problems of Azerbaijan National Academy of Sciences, Baku, Azerbaijan

J. I. Huseynov

Azerbaijan State Pedagogical University, Baku, Azerbaijan

M. A. Musaev and I. I. Abbasov

Azerbaijan State Oil and Industry University, Baku, Azerbaijan
E-mail: ibrahimabbasov179@gmail.com

V. A. Abdurakhmanova

Institute of Physics of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
pos Анотація:

Received March 28, 2020, revised August 10, 2020, published online September 21, 2020

Abstract

The paper reports the results of experimental studies of the thermal conductivity and density of CexSn1–xSe solid solutions in the temperature range 80–480 K. Under the assumption of elastic scattering of charge carriers, parabolic band and arbitrary degeneracy, the electronic and lattice components of thermal conductivity have been calculated. The characteristic features of the thermal conductivity of these crystals have been analyzed, it has been shown that with an increase in cerium content and with an increase in temperature, the total (χtot) and lattice (χph) thermal conductivity significantly decrease, while the density increases slightly (at 300 K). The dependence of thermal conductivity on the percentage of cerium in the composition has been established. With prolonged annealing, the total and lattice components of thermal conductivity increase. It has been established that heat transfer in CexSn1–xSe is carried out mainly by phonons.

Key words: solid solutions, lattice thermal conductivity, thermal resistance, point defects, phonon-phonon scattering.

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