Deep state in the bandgap and photoluminescence of Zn1–xMnxO
V.I. Sokolov1, N. B. Gruzdev1, V. N. Churmanov2, V. V. Menshenin1,and G. A. Emelchenko3
1M. N. Miheev Institute of Metal Physics of the Ural Branch of the Russian Academy of SciencesEkaterinburg 620108, Russia
2Ural Federal University, Ekaterinburg 620002, Russia
3Institute of Solid State Physics of the Russian Academy of Sciences Chernogolovka, Moscow District 142432, Russia
Received September 9, 2020, published online November 24, 2020
The impurity absorption in Zn1–xMnxO is formed by dipole allowed p–s transitions from deep antibonding p–d hybrid (pdh) state to the conduction band. In this paper, photoluminescence of Zn1–xMnxO single crystals was investigated in the temperature range of 7–340 Kat laser excitation with the energy of 3.06 eV. Intensive photoluminescence band was observed in the energy region of 2.40–1.6 eV with the maximum at the energy of 2.17 eV. The energy of the impurity center ionization 2.35 eV was determined in this paper. The analysis of photoluminescence band form, аnd also close coincidence of its headline and impurity band edge allow us to interprete this band as a result of radiative dipole allowed s–p transitions from the conduction band to impurity pdh level.
Key words: photoluminescence, ZnO:Mn, impurity photoionization, intracenter transitions.