Electric field ionization of boron acceptors in single-crystalline diamond
I.V. Altukhov, M. S. Kagan, S. K. Paprotskiy, and N. A. Khvalkovskiy
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of SciencesMoscow125009, Russia
N. B. Rodionov
Institute of Innovative and Thermonuclear Research, Troitsk 108840, Moscow distr., Russia
A. P. Bol’shakov and V. G. Ral’chenko
Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow 119991, Russia
R. A. Khmel’nitskiy
Lebedev Physical Institute of RAS, Moscow 119991, Russia
Received September 23, 2020, published online November 24, 2020
Vertical hole transport in single-crystalline diamond films with ohmic and Schottky contacts was studied at dc and pulsed electric fields up to ~ 5·105 V/cm. Conductivity mechanisms at different fields were identified. The concentrations of free carriers (holes) and acceptors were determined. The hole recombination time at boron acceptors has been estimated. The mechanisms of electric field ionization of boron acceptors are discussed.
Key words: single-crystalline diamond, boron acceptors, electric field ionization.