Fizika Nizkikh Temperatur: Volume 47, Number 1 (January 2021), p. 83-87    ( to contents , go back )

Electric field ionization of boron acceptors in single-crystalline diamond

I.V. Altukhov, M. S. Kagan, S. K. Paprotskiy, and N. A. Khvalkovskiy

Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of SciencesMoscow125009, Russia
E-mail: mskagan@mail.ru

N. B. Rodionov

Institute of Innovative and Thermonuclear Research, Troitsk 108840, Moscow distr., Russia

A. P. Bol’shakov and V. G. Ral’chenko

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow 119991, Russia

R. A. Khmel’nitskiy

Lebedev Physical Institute of RAS, Moscow 119991, Russia
pos Анотація:449

Received September 23, 2020, published online November 24, 2020

Abstract

Vertical hole transport in single-crystalline diamond films with ohmic and Schottky contacts was studied at dc and pulsed electric fields up to ~ 5·105 V/cm. Conductivity mechanisms at different fields were identified. The concentrations of free carriers (holes) and acceptors were determined. The hole recombination time at boron acceptors has been estimated. The mechanisms of electric field ionization of boron acceptors are discussed.

Key words: single-crystalline diamond, boron acceptors, electric field ionization.

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