Fizika Nizkikh Temperatur: Volume 47, Number 7 (July 2021), p. 596-602    ( to contents , go back )

Temperature gradient and transport of heat and charge in a semiconductor structure (Review Article)

Oleg Yu. Titov

Instituto Mexicano del Petróleo, Eje Central Lázaro Cárdenas 152, México 07730, CDMX, México

Yuri G. Gurevich

Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN Av. IPN 2508, México 07360, CDMX, México
pos Анотація:525

Received January 06, 2021, published online May 26, 2021


A detailed analysis of the influence of thermal nonequilibrium on transport in semiconductors was carried out. It is shown that the transport of heat and electricity in bipolar semiconductors are interdependent and self-consistent. In a general case, the distribution of the temperature in homogeneous semiconductors cannot be con-stant or a linear function with respect to the coordinate even in a linear approximation. The roles of nonequilibrium charge carriers and the recombination in the heat transport are established.

Key words: thermal nonequilibrium, recombination, quasineutrality, transport phenomena.

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