Growth kinetics for 4 He crystals at low 3 He content
V. L. Tsymbalenko
Pussian Scientific Center "Kurchatovskij Institute", Institute of Superconductivity and Solid State Physics, I.V. Kurchatova sq. Moscow 123182, Russia
( Submitted November 2, 1996, revised February 12, 1997 )
The kinetic growth coefficient of an atomically rough helium crystal surface is measured at low 3He concentrations of x = 8*10-5 and 2*10-4. Impurity does not affect the growth rate of the surface within the temperature range from 1.2 to 1.4K. The comparison of the experimental results with theory allows us to conclude on the lack of the diffusion contribution into growth kinetics.