Fizika Nizkikh Temperatur: Volume 27, Number 9-10 (September 2001), p. 1128-1137 ( to contents , go back )
Relaxation processes in amorphous films of monoatomic metals
V. M. Kyz`menko and B. G. Lazarev
National Science Center "Kharkov Institute of Physics and Technology", Institute for Theoretical Physics Akademicheskaya St.1, 61108 Kharkov, Ukraine
Received Jule 23, 2001
The electroresistance relaxation in the Bi, Yb, Be, Mn amorphous films is investigated at low temperatures. It is shown that this process is, as a rule,
a exponential process with a unique characteristic relaxation time. There occurs a subbarrier tunneling of the hydrogen atoms in the metal√hydrogen amorphous
films. We believe that this is responsible, in particular, for the delay in originating the superconductivity at T=4.2 K upon completion of the condensation of the Be√H amorphous films.