Fizika Nizkikh Temperatur: Volume 27, Number 9-10 (September 2001), p. 1128-1137    ( to contents , go back )

Relaxation processes in amorphous films of monoatomic metals

V. M. Kyz`menko and B. G. Lazarev

National Science Center "Kharkov Institute of Physics and Technology", Institute for Theoretical Physics Akademicheskaya St.1, 61108 Kharkov, Ukraine
pos Анотація:

Received Jule 23, 2001


The electroresistance relaxation in the Bi, Yb, Be, Mn amorphous films is investigated at low temperatures. It is shown that this process is, as a rule, a exponential process with a unique characteristic relaxation time. There occurs a subbarrier tunneling of the hydrogen atoms in the metal√hydrogen amorphous films. We believe that this is responsible, in particular, for the delay in originating the superconductivity at T=4.2 K upon completion of the condensation of the Be√H amorphous films.

61.43.Dq - Amorphous semiconductors, metals, and alloys
64.70.Pf - Glass transitions
74.80.Bj -
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