Low Temperature Physics: 30, 867 (2004); https://doi.org/10.1063/1.1819865 (4 pages)
Fizika Nizkikh Temperatur: Volume 30, Number 11 (November 2004), p. 1157-1161    ( to contents , go back )

Nonmonotonic temperature dependence of p-Ge/Ge1-xSix heterostructure resistance at insulator-metal transition

Yu.G. Arapov1, V.N. Neverov1,2, G.I. Harus1, N.G. Shelushinina1, M.V. Yakunin1, O.A. Kuznetsov3, L. Ponomarenko4, and A. De Visser4

1Institute of Metal Physics , S. Kovalevskoyi st. 18, Ekaterinburg 620219, Russia

2Ural State University, Lenin ave., 51, Ekaterinburg 620083, Russia

3НИФТИ, НГУ, г. Нижний Новгород, 603600, Россия

4Van der Waals-Zeeman Laboratory, University of Amsterdam 1018 XE, The Netherlands
pos Анотація:

Received May 11, 2004


A two-dimensional (2D) hole system (multilayer p-Ge/Ge1–xSix heterostructures) of conductivity se2/h displays a transition from dielectric (ds/dT > 0) to metallic (ds/dT < 0) behavior at low temperatures (T ≈ 1,5 К), in qualitative agreement with the Finkelshtein theory. For magnetic field B perpendicular to the 2D plane a positive magnetoresistance (PMR) depending only on ratio B/T is observed. The PMR effect is supposed to be due to the suppression of the triplet channel of Fermi-liqued electron- electron interaction by magnetic field because of the high Zeeman splitting in the hole spectrum.

71.30.+h - Metal-insulator transitions and other electronic transitions
73.21.Ac - Multilayers

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