Low Temperature Physics: 30, 877 (2004); https://doi.org/10.1063/1.1820017 (8 pages)
Fizika Nizkikh Temperatur: Volume 30, Number 11 (November 2004), p. 1169-1179    ( to contents , go back )

Molecular beam epitaxy and electron properties of Ge/Si heterosystems with quantum dots

A.V. Dvurechensky, A.I. Nikiforov, O.P. Pchelyakov, S.A. Teys, and A.I. Yakimov

Institute of physics of semiconductors of the Siberian Branch of the Russian Academy of Science ave. Lavrent`eva, 13, Novosibirsk, 630090, Russia
E-mail: pch@isp.nsc.ru
pos Анотація:

Received May 25, 2004

Abstract

The experimental data are reported for electrical and optical characteristics of Ge nanoislands in Si (artificial «atoms») which have a discrete energy spectrum down to room temperature. The modern ideas of the mechanisms of the initial stage of self-formation and ordering of nanoclasters ensembles under heteroepitaxy of Ge in Si are briefly considered. The main factors determining the energy spectrum are size quantization and Coulomb interaction of carriers. It is shown that a new factor which occurs in the array of quantum dobs (QD) and is different from that in the case of a single QD is Coulomb correlation between nanoislands. The emission rates and the hole capture cross-sections are determined as a function of energy level depth. The cross-section values are by several order of magnitude higher than those known for Si. The electron transport along the QD layers is realized via hopping conductivity whose value oscillates with changing the hole occupancy of islands. This may lie at the basis of productivity QD electronic circuits for data transmission. It is shown that the design of a photodetected with Ge quantum dots tunable to near and intermediate IR region is quite possible.

PACS:
61.14.-x - Electron diffraction and scattering (for electron diffractometers, see 07.78.+s)
61.30.Hn - Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions
61.46.+w -
73.23.Hk - Coulomb blockade; single-electron tunneling
73.63.Kv - Quantum dots

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