Low Temperature Physics: 30, 897 (2004); https://doi.org/10.1063/1.1820020 (7 pages)
Fizika Nizkikh Temperatur: Volume 30, Number 11 (November 2004), p. 1194-1202    ( to contents , go back )

The effects of resonance electron scattering by donor impurities in semiconductors

V.I. Okulov

Institute of Metal Physics , S. Kovalevskoyi st. 18, Ekaterinburg 620219, Russia
E-mail: okulov@imp.uran.ru
pos Анотація:

Received September 13, 2004

Abstract

On the basis of Friedel`s approach a theoretical description of the effects of resonance scattering of conduction electrons by donor impurities in semiconductors is developed with allowance made for the stabilization of electron concentration when the Fermi energy coincides with the resonance level energy. It is shown that such a stabilization gives rise to a maximum in the concentration dependence and to its related anomalies in the temperature dependences of electron mobility. It is also found that in the presence of resonance scattering of electrons by donor impurities in semiconductors the density of electrons localized at impurities makes a contribution to the spin susceptibility. The related Curie constant displays an unusual dependence on impurity oncentration. An expression for spin susceptibility of electrons scattered by resonance is derived in the framework of Friedel`s approach.

PACS:
72.10.Fk - Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
72.20.Dp - General theory, scattering mechanisms

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