Low Temperature Physics: 31, 326 (2005); https://doi.org/10.1063/1.1884436 (5 pages)
Fizika Nizkikh Temperatur: Volume 31, Number 3-4 (March 2005), p. 429-435    ( to contents , go back )

Spin-orbit interaction in bismuth thin films

Yu.F. Komnik, I.B. Berkutov, and V.V. Andrievskii

B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
E-mail: Andrievskii@ilt.kharkov.ua
pos Анотація:

Received November 1, 2004


The magnetic field dependencies of resistance of bismuth thin films 100–700 Å at low temperatures are analysed in the context of the concepts of quantum corrections to conductivity of electrons at weak electron localization. It is shown that the spin-orbit scattering time tso is essentially smaller than the electron phase relaxation one tj (the case of strong spin-orbit interaction) and has a tendency for an increased with film thickness. This suggests that the role of surface electron scattering in the spin-orbit processes is dominant. We assume that for this scattering the strong spin relaxation is accounted for by the inner crystal potential near the crystal surface which leads to lifting the spin degeneration and a spin gape appearance (the Rashba mechanism).

73.20.Fz - Weak or Anderson localization
72.15.Lh - Relaxation times and mean free paths

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