Low Temperature Physics: 33, 98 (2007); https://doi.org/10.1063/1.2409642 (7 pages)
Fizika Nizkikh Temperatur: Volume 33, Number 2-3 (February 2007), p. 143-152    ( to contents , go back )

Two-dimensional electron systems with strong interaction in silicon field structures

V.T. Dolgopolov

Institute of Solid State Physics RAS, Chernogolovka 142432, Russia
E-mail: dolgop@issp.ac.ru
pos Анотація:

Received February 7, 2006

Abstract

The experimental results for a strongly-interacting 2D electron system in Si MOSFETs are reviewed. Extrapolating the data obtained in the metallic region, suggests that the effective electron and the field of total spin polarization tend to diverge and to vanish, respectively, at a finite electron density.

PACS: 71.30.+h Metal–insulator transitions andother electronic transitions;
PACS: 73.43.–f Quantum Hall effects.

Key words: effective electron mass, silicon field structures.

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