Low Temperature Physics: 33, 147 (2007); https://doi.org/10.1063/1.2409651 (4 pages)
Fizika Nizkikh Temperatur: Volume 33, Number 2-3 (February 2007), p. 207-210    ( to contents , go back )

Quantum Hall effect in p-Ge/Ge1-xSix heterostructures with low hole mobility

Yu.G. Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G. Shelushinina, and M.V. Yakunin

Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
E-mail: arapov@imp.uran.ru

O.A. Kuznetsov

Physico-Technical Institute at Nizhnii Novgorod State University, Nizhnii Novgorod, Russia

L. Ponomarenko and A. de Visser

Van der Waals—Zeeman Institute, University of Amsterdam, The Netherlands
pos Анотація:

Received July 31, 2006

Abstract

The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor n = 1 has been investigated in p-type Ge/Ge1–xSix heterostructures with eFt / ħ ≈ 1. Scaling analysis is carried out for both the low- and high-field transition point. In low magnetic fields wct < 1 pronounced QH-like peculiarities for n = 1 are also observed in both the longitudinal and Hall resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition.

PACS: 73.40.–c Electronic transport interface structures;
PACS: 73.43.–f Quantum Hall effects.

Key words: Quantum Hall effects, heterostructures.

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