Low Temperature Physics: 33, 156 (2007); https://doi.org/10.1063/1.2409653 (4 pages)
Fizika Nizkikh Temperatur: Volume 33, Number 2-3 (February 2007), p. 217-221    ( to contents , go back )

Quantum effects peculiarities in 2D-structures GaAs/n-InGaAs/GaAs with double quantum wells

Yu.G. Arapov, М.V. Yakunin, S.V. Gudina, I.V. Karskanov, V.N. Neverov, G.I. Harus, N.G. Shelushinina, S.M. Podgornyh

Institute of Metal Physics , S. Kovalevskoyi st. 18, Ekaterinburg 620219, Russia
E-mail: arapov@imp.uran.ru

B.N. Zvonkov, and E.A. Uskova

Научно-исследовательский физико-технический институт при ННГУ, г. Нижний Новгород, 603600, Россия
pos Анотація:

Reseived September 22,2006

Abstract

The resistivity rxx (B, Т) for a low mobility dilute 2D elecron gas in GaAs/n-InGaAs/GaAs double quantum wells exhibits a monotonic «insulating-like» temperature dependence at T = 1.8–70 K (drxx(T)/dT < 0) in zero magnetic field and dsxy (B, T)/dT < 0 in the vicinity of wс t ≈ 1. This temperature interval corresponds to diffusive and ballistic regimes (kBTt / ħ = 0.1-3.8) for our samples. The electron density is on a «metallic» side (n > nc of the so-called B = 0 2D metal—insulator transition. Due to this anomalous sxy (B, T) T-dependence we observed some peculiarities of the insulator—quantum Hall state (with n=10) transition in low magnetic fields.

PACS: 73.50.Jt Galvanomagnetic and other magnetotransporteffects (including thermomagneticeffects);
PACS: 71.30.+h Metal—insulator transitionsand other electronic transitions.

Key words: double quantum wells, magnetotransport effects, electronic transitions.

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