Low Temperature Physics: 33, 160 (2007); https://doi.org/10.1063/1.2409654 (5 pages)
Fizika Nizkikh Temperatur: Volume 33, Number 2-3 (February 2007), p. 222-227    ( to contents , go back )

Contributions of electron-electron interaction and weak localization to conductivity of heterostructures p-Ge/Ge1-xSix

Yu.G. Arapov, S.V. Gudina, I.V. Karskanov, V.N. Neverov, G.I. Harus, and N.G. Shelushinina

Institute of Metal Physics , S. Kovalevskoyi st. 18, Ekaterinburg 620219, Russia
E-mail: arapov@imp.uran.ru

pos Анотація:

Received Octouber 9, 2006


'Contributions from the disorder-modified electron- electron interaction and weak localization to conductivity of low mobility p-Ge/Ge1-xSix heterostructures at 0.2 K ≤ T ≤ 4.2 K in magnetic field 0 ≤ B ≤ 2 T were divided. Contributions of Zeeman splitting to magnetoresistance have been taken into consideration in the electron-electron interaction. This permitted us to obtain reasonable values of inelastic scattering time tj and its power temperature dependence predicted by theory. The Hartree part of the interaction constant i>F0s=-0.51, the amplitude of Fermi-liquid interaction l= 0.40, the Lande factor g = 12.0 are estimated.

PACS: 73.20.Fz Weak or Anderson localization;
PACS: 73.21.Ac Multilayers;
PACS: 73.40.–c Electronic transport in interface structures.

Key words: 'electron-electron interaction, weak localization, Zeeman splitting, magnetoresistance.

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