Low Temperature Physics: 33, 280 (2007); https://doi.org/10.1063/1.2719968 (3 pages)
Fizika Nizkikh Temperatur: Volume 33, Number 2-3 (February 2007), p. 374-377    ( to contents , go back )

Electrical properties of chalcogenides AgGeAsS3xSe3(1-x)(0.1≤x≤0.9)

O.L. Kheifets, A.N. Babushkin, O.A. Shabashova, and N.V. Melnikova

Ural State University, Lenin ave., 51, Ekaterinburg 620083, Russia
E-mail: olga.kobeleva@usu.ru
pos Анотація:

Received September 7, 2006


The paper concerns the synthesis and investigation of electrical properties of chalcogenides AgGeAsS3xSe3(1-x)(0.1≤x≤0.9) at low temperatures. The researche was carried out by the method of impedance spectroscopy. The synthesized materials are ionic conductors. The temperature intervals are determined in which conductivity and dielectric permeability of the investigated materials are of special behavior.

PACS: 66.30.Dn Theory of diffusion and ionic conduction in solids;
PACS: 72.60.+g Mixed conductivity and conductivity transitions;
PACS: 77.22.–d Dielectric properties of solidsand liquids.

Key words: solid state ionics, semiconductors, chalcogenides, crioelectronics, ferroelectrics.

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