Low Temperature Physics: 34, 535 (2008); https://doi.org/10.1063/1.2957005 (3 pages)
Fizika Nizkikh Temperatur: Volume 34, Number 7 (July 2008), p. 677-680    ( to contents , go back )

Nanocontact spin-electric effect

R.N. Gurzhi, A.N. Kalinenko, A.I. Kopeliovich, and A.V. Yanovsky

B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
E-mail: gurzhi@ilt.kharkov.ua
pos Анотація:

Received January 15, 2008

Abstract

The effect of spin signal transformation to a change of electric potential has been predicted. The effect arises at penetration of spin-polarized electrons from nonmagnetic circuit N to magnetized magnetic attachment M with Zeeman splitting of the electron spectrum. The penetration of spin-polarized electrons to M results to a formation of double electric layer at M–N interface and consequently to electric potential discontinuous jump between M and N due to the fact that M has higher density of states of certain spin direction. The predicted effect may be used a a method of direct spin signal detection in nonmagnetic metals and semiconductors as well as solution of some spiutronic problems in view of ease control of currents in semiconductors by electric field.

PACS: 72.25.Hg Electrical injection of spin-polarized carriers;
PACS: 72.25.Mk Spin transport through interfaces;
PACS: 73.40.Sx Metal–semiconductor–metal structures;
PACS: 73.61.Ga II–VI semiconductors.

Key words: spin signal, spin-polarized electrons, density of states.

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