Low Temperature Physics: 35, 15 (2009); https://doi.org/10.1063/1.3064872 (6 pages)
Spin-dependent tunneling conductance in 2D structures in zero magnetic field
I.V. Rozhansky and N.S. Averkiev
A.F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., St. Petersburg 194021, Russia
Received Jule 23, 2008
The influence of spin-orbit interaction on the tunneling between two 2D electron layers is considered. A general expression for tunneling current is obtained with account for Rashba and Dresselhaus effects and elastic scattering by impurities. It is demonstrated that a particular dependence of tunneling conductance on external voltage is very sensitive to the relation between Rashba and Dresselhaus contributions. This makes it possibile to determine the parameters of spin-orbit interaction and electron quantum lifetime just when measuring the on tunneling between low-dimensional electron layers without any external magnetic field.
PACS: 73.63.Hs Quantum wells;
Key words: spin-dependent tunneling, spin-orbit interaction, quantum wells.