Low Temperature Physics: 35, 32 (2009); https://doi.org/10.1063/1.3064895 (12 pages)
Fizika Nizkikh Temperatur: Volume 35, Number 1 (January 2009), p. 44-58    ( to contents , go back )

Magnetotransport in 2D structures n-InGaAs/GaAs with double quantum wells in the vicinity of insulator to quantum Hall effect regime transition

Yu.G. Arapov, I.V. Karskanov, G.I. Harus, V.N. Neverov, N.G. Shelushinina, and М.V. Yakunin

Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
E-mail: arapov@imp.uran.ru
pos Анотація:

Received August 13, 2008

Abstract

Temperature and magnetic field dependences of conductivity and resistivity tensor components with account of the quantum corrections due to weak localization (WL) and electron-electron interactions (EEI) effects at diffusive and ballistic regimes have been calculated. The quantum corrections to the conductivity due to WL and EEI at the ballistic regime and the influence of spin and oscillation effects have been accounted by the renormalization of momentum relaxation time that results in a temperature dependence of the Drude conductivity. The conductivity and resistivity tensor components are calculated by using the theoretical quantum correction parameter values. The latter depend only on electron density and mobility of a concrete sample. The calculated results were compared with the experimental data for the 2D structures n-InGaAs/GaAs with double quantum wells. It is shown that the account of the quantum corrections with the theoretical values of the parameters does not allow the experimental results to be described even qualitatively — additional, temperature dependent contributions to the Drude conductivity should be taken into account.

PACS: 73.20.Fz Weak or Anderson localization;
PACS: 73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects);
PACS: 71.30.+h Metal–insulator transitions andother electronic transitions.

Key words: quantum corrections to the conductivity, weak localization, electron-electron interactions, diffusive and ballistic regimes.

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