Low Temperature Physics: 35, 44 (2009); https://doi.org/10.1063/1.3064903 (4 pages)
Fizika Nizkikh Temperatur: Volume 35, Number 1 (January 2009), p. 59-63    ( to contents , go back )

Quantum Hall effect in InAs/AlSb double quantum well

M.V. Yakunin, S.M. Podgornukh

Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
E-mail: yakunin@imp.uran.ru

Yu.G. Sadofyev

Рязанский государственный радиотехнический университет, ул. Гагарина, 59/1, г. Рязань, 390005, Россия
pos Анотація:

Received Jule 21, 2008

Abstract

The double quantum well (DQW) is realized for the first time in the InAs/AlSb heterosystem, characterized by a large Lande g-factor value |g| = 15 of the InAs layers that form the wells, this g-factor being incomparable to the bulk g-factor |g| = 0.44 in GaAs in traditional GaAs/AlGaAs DQWs. The sample quality is sufficiently good to obtain a distinct quantum Hall effect (QHE) picture. In spite of a small tunneling gap, due to a high barrier of 1.4 eV, there are features in the QHE, with odd filling factor values n = 3, 5, 7…, manifesting their collective interlayer nature. The n = 3 state is suppressed with the tilt of magnetic field relative to the sample normal that confirms the collectivized nature of this state and denies that it may be due to a strong asymmetry of the DQW. Only the destruction of the n = 1 collectivized QHE state by a parallel magnetic field has been observed so far. Observation of this effect for n = 3 in InAs/AlSb DQW may be due to a large InAs bulk g-factor.

PACS: 73.50.Jt Galvanomagnetic and other magnetotransport effects;
PACS: 73.20.–r Surface and interface electronic states.

Key words: double quantum well, quantum Hall effect, tilted magnetic fields, g-factor.

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