Low Temperature Physics: 35, 48 (2009); https://doi.org/10.1063/1.3064908 (5 pages)
Fizika Nizkikh Temperatur: Volume 35, Number 1 (January 2009), p. 64-69    ( to contents , go back )

Doped nanoparticles for optoelectronics applications

M. Godlewski1,2, E. Wolska2, and S. Yatsunenko1

1Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
E-mail: godlew@ifpan.edu.pl

2Department of Mathematics and Natural Sciences, College of Sciences, Cardinal S. Wyszyński University, Warsaw, Poland

A. Opalińska, J. Fidelus, and W. Łojkowski

Institute of High Pressure PAN «Unipress», Sokołowska 29/37, Warsaw, Poland

M. Zalewska and A. Kłonkowski

Faculty of Chemistry, University of Gdańsk, Sobieskiego 18, 80-952 Gdańsk, Poland

D. Kuritsyn

Institute for Physics of Microstructures Russian Academy of Science, GSP-105, Nizhny Novgorod, 603950 Russia
pos Анотація:

Received July 8, 2008

Abstract

Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped with rare earth or/and transition metal ions. Arguments are presented that phosphors of nanosize may emit light more efficiently and thus be applied in practical optoelectronic devices.

PACS: 81.07.Wx Nanopowders;
PACS: 78.47.–p Spectroscopy of solid state dynamics;
PACS: 78.55.–m Photoluminescence, properties and materials;
PACS: 78.55.Hx Other solid inorganic materials.

Key words: excitation processes in nanoparticles, photon cascade processes.

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