Low Temperature Physics: 37, 815 (2011); https://doi.org/10.1063/1.3670023 (4 pages)
Fizika Nizkikh Temperatur: Volume 37, Number 9-10 (September 2011), p. 1022-1026    ( to contents , go back )

Quantum oscillations in a gated graphene bilayer

L.A. Falkovskii

Landau Institute for Theoretical Physics, RAS Kosygina, 2, Moscow 119334 ,Russia
E-mail: falk@itp.ac.ru
pos Анотація:

Received February 14, 2011

Abstract

The oscillations of forbidden gap, chemical potential and carrier concentration on a graphene bilayer at a quasi-classical magnetic field and a transverse electrical one produced by gate voltage are considered.

PACS: 73.20.At Surface states, band structure, electron density of states;
PACS: 73.21.Ac Multilayers;
PACS: 73.43.–f Quantum Hall effects;
PACS: 81.05.U– Carbon/carbon-based materials.

Key words: graphene bilayer, tunable forbidden gap, quantum oscillations, Dingle factor.

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