Low Temperature Physics: 38, 870 (2012); https://doi.org/10.1063/1.4752090 (4 pages)
Fizika Nizkikh Temperatur: Volume 38, Number 9 (September 2012), p. 1097-1101    ( to contents , go back )

Temperature behavior of fundamental absorption edge in quasi-two-dimensional MnPS3 crystal

V.G. Piryatinskaya, I.S. Kachur, V.V. Slavin, A.V. Yeremenko

B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
E-mail: piryatinskaya@ilt.kharkov.ua

Yu.M. Vysochanskii

Uzhgorod National University, 46 Pidhirna Str., Uzhgorod 88000, Ukraine
pos Анотація:

Received June 9, 2012


The light absorption spectra of the layered semiconductor MnPS3 are measured in the temperature range 12–160 K, which covers the temperature of magnetic ordering. It is shown that the interband light absorption coefficient can be described well in the frameworks of three-dimensional model for direct allowed transitions, while an increase in temperature leads only to a decrease of effective energy gap. A theoretical model is proposed to describe the optical transition in the crystal. A comparison between experimental and theoretical data indicates that the chosen model is adequate.

PACS: 78.40.–q Absorption and reflection spectra: visible and ultraviolet;
PACS: 78.40.Fy Semiconductors;
PACS: 75.50.Ee Antiferromagnetics.

Key words: light absorption spectra, layered semiconductors, interband light absorption coefficient.

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