Low Temperature Physics: 39, 35 (2013); https://doi.org/10.1063/1.4775746 (4 pages)
Fizika Nizkikh Temperatur: Volume 39, Number 1 (January 2013), p. 48-52    ( to contents , go back )

The Fano effect under tunneling of a spin-polarized electron through a single magnetic impurity

V.V. Val’kov1,2, S.V. Aksenov1, and E.A. Ulanov2

1Kirenskii Institute of Physics, Krasnoyarsk 660036, Russia
E-mail: vvv@iph.krasn.ru,
asv86@iph.krasn.ru

2Сибирский аэрокосмический университет, г. Красноярск, 660014, Россия
pos Анотація:

Received September 13, 2012

Abstract

The calculation of single magnetic impurity’s transport characteristics has showed that presence of different effective channels for electron transmission results the Fano effect. It was noticed the external magnetic field and gate voltage allow to control of conducting properties which are specified by the configuration interaction between states of the system.

PACS: 75.76.+j Spin transport effects;
PACS: 72.25.–b Spin polarized transport;
PACS: 85.75.–d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields.

Key words: Fano effect, transport processes.

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