Low Temperature Physics: 39, 43 (2013); https://doi.org/10.1063/1.4775751 (7 pages)
Fizika Nizkikh Temperatur: Volume 39, Number 1 (January 2013), p. 58-65    ( to contents , go back )

Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells

Yu.G. Arapov1, S.V. Gudina1, V.N. Neverov1, S.M. Podgornykh1,2, and M.V. Yakunin1,2

1Institute of Metal Physics , S. Kovalevskoyi st. 18, Ekaterinburg 620990, Russia
E-mail: arapov@imp.uran.ru

2Ural Federal University named after the first President of Russia B.N.Yeltsin, Mira st. 19, Ekaterinburg 620002, Russia
pos Анотація:

Received Octouber 10, 2012

Abstract

Longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances have been investigated experimentally as a function of the in-plane and transverse magnetic fields in a n-InGaAs/GaAs structures with strongly-coupled double quantum wells in the temperature range T = 1.8–70 K and magnetic fields B = 0–9,0 T. The experimental data on temperature dependence of quantum lifetime in diffusive (kBTtr << 1) and ballistic (kBTtr >> 1) regimes are considered. It is found that for the ballistic regime temperatures, kBT/EF < 0.1, the observed quadratic temperature dependence of quantum lifetime is determined by inelastic electronelectron scattering. However, in the whole temperature range the temperature dependence of quantum lifetime is not described quantitatively by the existing theories.

PACS: 73.21.Fg Quantum wells;
PACS: 73.40.–c Electronic transport in interface structures;
PACS: 73.43.Qt Quantum transport.

Key words: quantum lifetime, quasi-two-dimensional electron gas, inelastic electron-electron scattering, diffusive and ballistic regimes, resonance tunneling.

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