Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
Received September 13, 2012
Temperature and magnetic-field dependences of longitudinal ρxx(B,T) and Hall ρxy(B,T) resistivities of
n-InxGa1−xAs/GaAs nanostructures with single and double quantum wells are investigated in the quantum
Hall effect (QHE) regime at B = 0–16 Т and T = 0.05–70 K, before and after IR illumination. The temperature dependence of the QHE plateau-to-plateau transition width are analyzed and information about temperature dependences of the width of delocalized state stripes in the center of Landau subbands is obtained.
PACS: 73.21.Fg Quantum wells; PACS: 73.40.–c Electronic transport in interface structures; PACS: 73.43.–f Quantum Hall effects.
Key words: quantum Hall effect, the scaling hypothesis, the scale of potential.