Low Temperature Physics: 39, 50 (2013); https://doi.org/10.1063/1.4775752 (8 pages)
Fizika Nizkikh Temperatur: Volume 39, Number 1 (January 2013), p. 66-75    ( to contents , go back )

Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime

Yu.G. Arapov, S.V. Gudina, V.N. Neverov, S.G. Novokshonov, A.S. Klepikova, G.I. Kharus, N.G. Shelushinina, and M.V. Yakunin

Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
E-mail: neverov@imp.uran.ru
pos Анотація:

Received September 13, 2012


Temperature and magnetic-field dependences of longitudinal ρxx(B,T) and Hall ρxy(B,T) resistivities of n-InxGa1−xAs/GaAs nanostructures with single and double quantum wells are investigated in the quantum Hall effect (QHE) regime at B = 0–16 Т and T = 0.05–70 K, before and after IR illumination. The temperature dependence of the QHE plateau-to-plateau transition width are analyzed and information about temperature dependences of the width of delocalized state stripes in the center of Landau subbands is obtained.

PACS: 73.21.Fg Quantum wells;
PACS: 73.40.–c Electronic transport in interface structures;
PACS: 73.43.–f Quantum Hall effects.

Key words: quantum Hall effect, the scaling hypothesis, the scale of potential.

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