I. Frantsevich Institute for Problems of Materials Science NAS str. Wilde, 5, Chernivtsi, 58001, Ukraine pos Анотація:
Received Octouber 3, 2012
The crystal structure, composition, galvanomagnetic properties in weak magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) and the Shubnikov–de Haas effect (T = 4.2 K, B ≤ 7 T) are studied for Pb1–x–ySnxVyTe (x = 0, 0.05-0.18) alloys, synthesized by the Bridgman technique, of vanadium impurity concentration being varied. It is shown that an increase of vanadium impurity content brings into existence the regions enriched with vanadium and microscopic inclusions of compounds
with a composition close to V3Te4. In Pb1–yVyTe a pinning of the Fermi level by the vanadium deep level, an insulator–metal transition and an increase of free
electron concentration with vanadium content are found out. The kinetics of changes in free charge carrier concentration with increasing vanadium impurity concentration in Pb1–yVyTe and Pb1–x–ySnxVyTe (x = 0.05–0.18) alloys is compared. Possible models of electronic structure rearrangement under vanadium
doping for Pb1–x–ySnxVyTe alloys are discussed.
PACS: 71.20.Nr Semiconductor compounds; PACS: 71.55.–i Impurity and defect levels; PACS: 72.20.My Galvanomagnetic and other magnetotransport effects; PACS: 75.50.Рр Magnetic semiconductors.
Key words: IV-VI semiconductors, transition metal impurities, galvanomagnetic effects, Shubnikov-de Haas oscillations, deep vanadium level, insulator-metal transition, electronic structure.