The three-dimensional topological insulator based on a strained HgTe film
D.A. Kozlov1, Z.D. Kvon1, M.L. Savchenko2, D. Weiss3, N.N. Mikhailov1, and S.A. Dvoretskii1
1Institute of Semiconductor Physics, Novosibirsk 630090, Russia
2Novosibirsk State University, street. Pirogova, 2, Novosibirsk, 630090, Russia
3Experimental and Applied Physics, University of Regensburg, Regensburg D-93040, Germany pos Анотація:
Received October 6, 2014
We investigated the electron and hole transport in a three-dimensional topological insulator based on a high-mobility (up to 4∙105 cm2/V∙s) strained 80 nm thick mercury telluride film. Owing to the presence of the gate the Fermi energy is turned from the valence band through the Dirac type surface states into the conduction band. The magnetotransport measurements allowed us to disentangle the contributions from conduction band electrons and holes as well as from Dirac electrons to conductivity.
PACS: 73.25.+i Surface conductivity and carrier phen; PACS: 73.20.At Surface states, band structure, electron density of states; PACS: 73.43.–f Quantum Hall effects.
Key words: three-dimensional topological insulator, mer-cury telluride, magnetotransport, quantum Hall effect.