Low Temperature Physics: 41, 106 (2015); https://doi.org/10.1063/1.4908192
Fizika Nizkikh Temperatur: Volume 41, Number 2 (February 2015), p. 139-146    ( to contents , go back )

Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination

Yu.G. Arapov1, S.V. Gudina1, A.S. Klepikova1, V.N. Neverov1, G.I. Harus1, N.G. Shelushinina1, and M.V. Yakunin1,2

1Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
E-mail: neverov@imp.uran.ru; as_klepikova@mail.ru

2Ural Federal University, Mira st. 19, Ekaterinburg 620002, Russia
pos Анотація:

Received October 6, 2014

Abstract

The longitudinal rxx(B, T) and Hall rxy(B, T) resistivities in the quantum Hall effect (QHE) regime for n-InGaAs/GaAs nanostructures with single quantum wells are investigated at B = 0–12 T and T = 0.4–4.2 K, before and after IR illumination. The temperature dependences of QHE plateau-to-plateau transition width are analyzed by using the two-parameter scaling theory.

PACS: 73.21.Fg Quantum wells;
PACS: 73.40.–c Electronic transport in interface structures;
PACS: 73.43.–f Quantum Hall effects.

Key words: quantum Hall effect, scaling hypothesis, a scale of impurity potential.

Published online:: December 22, 2014

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