Fizika Nizkikh Temperatur: Volume 41, Number 2 (February 2015), p. 153-164    ( to contents , go back )

Electron transport, low-temperature electrical and galvanomagnetic properties of zinc oxide and indium oxide films

V.A. Kulbachinskii, V.G. Kytin, O.V. Reukova

Physics Faculty, M.V. Lomonosov Moscow State University Moscow 119991, Russia
E-mail: kulb@mig.phys.msu.ru

L.I. Burova, A.R. Kaul

M.V. Lomonosov Moscow State University Moscow 119991, Russia

A.G. Ulyashin

SINTEF Materials and Chemistry, Box 124 Blindern, Oslo 0314, Norway
pos Анотація:

Received October 13, 2014

Abstract

The electrophysical and galvanomagnetic properties of undoped and doped zinc oxide films with gallium, aluminum and cobalt, and indium oxide films doped with tin were investigated in wide temperature and magnetic field ranges. It was shown that the decrease of the film cristallinity caused by the method of film synthesis led to a change of the electron transport type from the band electron transport to the hopping electron one. The effective dimensionality crossover initiated by magnetic field in the films with the band type of electron transport was studied. The values of localization radius and density of states at the Fermi level of the films with the hopping mechanism of transport was evaluated.

PACS: 73.61.–r Electrical properties of specific thin films;
PACS: 73.50.–h Electronic transport phenomena in thin films;
PACS: 72.15.Rn Localization effects (Anderson or weak localization);
PACS: 73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermo-magnetic effects).

Key words: weak localization, positive magnetoresistance in ZnO:Co, hopping conductivity, thin films ZnO, ITO.

Published online: December 22, 2014

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