Low Temperature Physics: 41, 157 (2015); https://doi.org/10.1063/1.4906539
Fizika Nizkikh Temperatur: Volume 41, Number 2 (February 2015), p. 207-209    ( to contents , go back )

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

T. Charikova, V. Okulov, A. Gubkin, and A. Lugovikh

Institute of Metal Physics RAS, Ekaterinburg, Russia
E-mail: charikova@imp.uran.ru

K. Moiseev and V. Nevedomsky

Ioffe Institute, St. Petersburg, Russia

Yu. Kudriavtsev and S. Gallardo

Departamento de Ingenieria Electrica–SEES, Cinvestav-IPN, Mexico

M. Lopez

Departamento de Fisica, Cinvestav-IPN, Mexico
pos Анотація:

Received October 20, 2014


The magnetic moment and magnetization in GaAs/Ga0.84In0.16As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass mag-netization all of the samples of GaAs/Ga0.84In0.16As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.

PACS: 72.80.Ey III–V and II–VI semiconductors;
PACS: 75.50.Pp Magnetic semiconductors.

Key words: magnetic semiconductors, magnetization, depletion layer of manganese.

Published online: December 22, 2014

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