Low Temperature Physics: 43, 290 (2017); https://doi.org/10.1063/1.4976636
Fizika Nizkikh Temperatur: Volume 43, Number 2 (February 2017), p. 353-359    ( to contents , go back )

On the nature of ionic liquid gating of Nd2–xCexCuO4 thin films

Hasan Atesci1, Francesco Coneri2, Maarten Leeuwenhoek1, Hans Hilgenkamp2, and Jan M. van Ruitenbeek1

1Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The Netherlands
E-mail: ruitenbeek@physics.leidenuniv.nl

2MESA+ Institute for Nanotechnology, University of Twente P.O. Box 217, 7500 AE Enschede, The Netherlands
pos Анотація:

Received August 19, 2016


Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd2–xCexCuO4. We find major resistance drops of the bilayer coupled to observations of the presence of a considerable Faradeic component in the gate current and of the appearance of charge transfer peaks in the cyclic voltammetry data. This leads us to propose a mechanism of gating based on irreversible electrochemical reactions, likely due to trace amounts of contaminations present in the ionic liquid. This work is therefore in line with previous reports confirming the presence of irreversible electrochemistry in ionic liquid gated electron-doped cuprates.

PACS: 66.10.–x Diffusion and ionic conduction in liquids;
PACS: 68.15.+e Liquid thin films;
PACS: 82.45.–h Electrochemistry and electrophoresis.

Key words: Nd2–xCexCuO4, ionic liquid, conductance, electrochemistry, nanoionics.

Published online: December 26, 2016

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