Low Temperature Physics: 43, 478 (2017); https://doi.org/10.1063/1.4983184
Fizika Nizkikh Temperatur: Volume 43, Number 4 (April 2017), p. 596-604    ( to contents , go back )

The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide

A.S. Klepikova1, Yu.G. Arapov1, S.V. Gudina1, V.N. Neverov1, G.I. Harus1, N.G. Shelushinina1, M.V. Yakunin1,2, and B.N. Zvonkov3

1Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
E-mail: neverov@imp.uran.ru,
klepikova@imp.uran.ru

2Ural Federal University, Mira, 19, Ekaterinburg 620002, Russia

3НИФТИ федерального государственного автономного образовательного учреждения высшего образования «Нижегородский государственный университет им. Н.И. Лобачевского», пр. Гагарина, 23, корп. 3, г. Нижний Новгород, 603950, Россия
pos Анотація:

Received December 6, 2016

Abstract

The longitudinal and Hall resistivities in the quantum Hall effect (QHE) regime for n-InGaAs/GaAs nanostructures with single and double quantum wells are investigated at B=(0–16) T and T=(0.05–4.2) K, before and after IR-illumination. The features of the critical behavior of the longitudinal and Hall conductance in the plateau-plateau regions are studied to identify the conditions of experimental observation of the scaling mode. Temperature dependences of QHE plateau-to-plateau transition width are analyzed on a base of two-parameter scaling theory.

PACS: 73.21.Fg Quantum wells;
PACS: 73.40.–c Electronic transport in interface structures
PACS: 73.43.–f Quantum Hall effects.

Key words: quantum Hall effect, scaling hypothesis, scale of impurity potential.

Published online: February 24, 2017

Download 1581766 byte View Contents