Low Temperature Physics: 43, 515 (2017); https://doi.org/10.1063/1.4984077
Fizika Nizkikh Temperatur: Volume 43, Number 4 (April 2017), p. 643-648    ( to contents , go back )

High conducting transparent materials based on wide-gap ZnO

G.V. Lashkarev1, V.A. Karpyna1, L.I. Ovsiannikova1, V.V. Kartuzov1, M.V. Dranchuk1, M. Godlewski2, R. Pietruszka2, V.V. Khomyak3, and L.I. Petrosyan1

1Institute for Problems in Materials Science NASU, Krzhizhanovsky str., 3, 03680, Kyiv, Ukraine
E-mail: geolash@ipms.kiev.ua

2Институт физики ПАН, ал. Лотников, 32/46, г. Варшава, Польша

3Chernivtsi National University, Kotsiubynskogo Str., Chernivtsi 58012, Ukraine
pos Анотація:

Received December 19, 2016

Abstract

In this work we have discussed the properties of transparent conductive materials based on wide band-gap semiconductor zinc oxide promising for applications in photovoltaics and liquid crystal displays. We investigated the influence of aluminium doping on conductivity of ZnO thin films. Temperature dependencies of carrier concentration, mobility and resistivity for temperature range 77–300 K were carried out re-vealing the metal-like behavior of highly doped films. The electroactivity of aluminium as donor impurity in ZnO lattice was studied for thin films with 1–7 at.% of Al grown by atomic layer deposition on silicon and glass substrates. The problems of low Al electro-activity in ZnO were discussed and the ways of its enhancement were suggested.

PACS: 64.60.My Metastable phases;
PACS: 05.70.Ln Nonequilibrium and irreversible thermodynamics;
PACS: 61.72.Bb Theories and models of crystal defects;
PACS: 61.72.Mm Grain and twin boundaries.

Key words: zinc oxide, transport conducting oxide, donor impurity, doping.

Published online: February 24, 2017

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