Low Temperature Physics: 43, 756 (2017); https://doi.org/10.1063/1.4995622
Fizika Nizkikh Temperatur: Volume 43, Number 7 (July 2017), p. 950-961    ( to contents , go back )

Intrinsically shunted Josephson junctions for electronics applications

M. Belogolovskii1,2, E. Zhitlukhina2,3, V. Lacquaniti4, N. De Leo4, M. Fretto4, and A. Sosso4

1Institute for Metal Physics, Kyiv 03142, Ukraine
E-mail: belogolovskii@ukr.net

2Donetsk National University, Vinnytsia 21021, Ukraine

3Donetsk Institute for Physics and Engineering, Kyiv 03028, Ukraine

4National Institute for Metrological Research, Torino 10135, Italy
pos Анотація:

Received February 14, 2017


Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic cur-rent-voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities that are so strongly disordered in the inter-face plane that transmission probabilities are tiny for the main part of the transition region between two super-conducting electrodes, while a small part of the interface is well transparent. We discuss the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K.

PACS: 85.25.Cp Josephson devices;
PACS: 73.23.–b Electronic transport in mesoscopic systems;
PACS: 68.55.aj Thin film structure and morphology.

Key words: Josephson junctions, charge transport, internal shunting, disordered interfaces, superconducting electronics.

Published online: May 25, 2017

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