Low Temperature Physics: 47, 19 (2021); https://doi.org/10.1063/10.0002893
Quantum insulator in a semimetal channel on a single type II broken-gap heterointerface in high magnetic fields
K. D. Moiseev, K. Yu. Golenitskii, and N. S. Averkiev
A. F. Ioffe Physical-Technical Institute, St. Petersburg 194021, Russia
Received September 23, 2020, published online November 24, 2020
The peculiarity of planar quantum magnetotransport in the type II broken-gap p-GaInAsSb/p-InAs heterostructures at high magnetic fields has been investigated. The structure of the hybridized energy spectrum of a two-dimensional semimetal channel at a single type II broken-gap heterointerface was considered in dependence on the composition of the quaternary solid solution. A transition from a conducting state to a dielectric state (quantum insulator) for a 2D-semimetal channel at the heteroboundary was observed in quantizing magnetic fields under the condition of simultaneous filling of the first Landau levels for 2D-electron and interface hole states.
Key words: quantum magnetotransport, seft-consistent quantum wells, type II heterojunction, GaSb, InAs.