Fizika Nizkikh Temperatur: Volume 47, Number 11 (November 2021), p. 994-1002    ( to contents , go back )

Doping from CDW to topological superconductivity: The role of defects on phonon scattering in the non-centrosymmetric PbxTaSe2


B.Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of UkraineKharkiv 61103, Ukraine

A.Sharafeev, R. Bohle, and P. Lemmens

Institute for Condensed Matter Physics, TU Braunschweig, Braunschweig D-38106, Germany
Laboratory for Emerging Nanometrology, TU Braunschweig, Braunschweig D-38106, Germany

K.-Y. Choi

Department of Physics, Sungkyunkwan University, Suwon, Korea

F.C. Chou and R. Sankar

Institute of Physics, Academia Sinica, Nankang, Taipei 11529, R.O.C. Taiwan
pos Анотація:831

Received August 8, 2021, published online September 24, 2021


The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealedadditional broad modes in the low-frequency regime, which are discussed in the context of the remnant chargedensity wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

Key words: Raman spectroscopy, topological materials, transition metal dichalcogenides.

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